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參數(shù)資料
| 型號： | NTE469 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon N-Channel JFET Transistor Chopper, High Speed Switch |
| 中文描述： | 硅N溝道場效應(yīng)晶體管斬波器，高速開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE469 |
NTE469
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Applications:
Analog Switches
Choppers
Commutators
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Gate Current, I
G
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering), T
L
35V
35V
50mA
625mW
5.68mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GS
S
I
GSS
V
GS(off)
I
D(off)
I
G
= 1
μ
A, V
DS
= 0
35
–
–
V
Gate Reverse Current
V
GS
= –15V, V
DS
= 0
V
DS
= 5V, I
D
= 1
μ
A
V
DS
= 5V, V
GS
= –10V
–
–
–1.0
nA
Gate–Source Cutoff Voltage
–0.5
–
–3.0
V
Drain Cutoff Current
–
–
1.0
nA
ON Characteristics
Zero–Gate Voltage Drain Current
I
DSS
r
DS
(on)
C
dg(on)
C
sg(on)
C
dg(off)
C
sg(off)
V
DS
= 15V, V
GS
= 0, Note 1
V
DS
= 0.1V
V
DS
= V
GS
= 0, f = 1MHz
V
DS
= V
GS
= 0, f = 1MHz
V
GS
= –10V, f = 1MHz
V
GS
= –10V, f = 1MHz
2.0
–
–
mA
pF
Static Drain–Source ON Resistance
–
–
100
Drain–Gate ON Capacitance
–
–
28
Source–Gate ON Capacitance
–
–
28
pF
Drain–Gate OFF Capacitance
–
–
5
pF
Source–Gate OFF Capacitance
–
–
5
pF
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 3%.
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