參數(shù)資料
型號(hào): NTE467
廠商: NTE Electronics, Inc.
英文描述: Silicon N-channel JFET Transistor Chopper, High Speed Switch
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管斬波器,高速開(kāi)關(guān)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 20K
代理商: NTE467
NTE467
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Reverse Gate–Source Voltage, V
GSR
Forward Gate Current, I
G(f)
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
30V
30V
30V
10mA
310mW
2.82mW/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 10
μ
A, V
DS
= 0
I
GSS
V
GS
= –15V, V
DS
= 0
V
GS
= –15V, V
DS
= 0, T
A
= +100
°
C
I
D(off)
V
DS
= 15V, V
GS
= –12V
V
DS
= 15V, V
GS
= –12V, T
A
= +100
°
C
30
V
Gate Reverse Current
1.0
nA
μ
A
nA
μ
A
1.0
Drain Cutoff Current
1.0
1.0
ON Characteristics
Zero–Gate Voltage Drain Current
I
DSS
V
DS(on)
r
DS
(on)
C
iss
C
rss
V
DS
= 20V, V
GS
= 0, Note 1
I
D
= 12mA, V
GS
= 0
I
D
= 1mA, V
GS
= 0
V
GS
= –12V, V
DS
= 0, f = 1MHz
V
GS
= –12V, V
DS
= 0, f = 1MHz
50
mA
Drain–Source ON–Voltage
0.5
V
pF
Static Drain–Source ON Resistance
30
Input Capacitance
10
Reverse Transfer Capacitance
4
pF
Switching Characteristics
Turn–On Delay Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10V, V
GS(on)
= 0,
V
GS(off)
= 10V, I
D(on)
= 12mA,
R
G
= 50
4
ns
Rise Time
5
ns
Turn–Off Delay Time
5
ns
Fall Time
10
ns
Note 1. Pulse Test: Pulse Width
300
μ
s, Duty Cycle
3%.
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