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參數(shù)資料
| 型號： | NTE2987 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125 |
| 中文描述： | 邏輯電平MOSFET N溝道，增強模式高速開關(guān) |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | NTE2987 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF
Drain
–
Source Breakdown Voltage
BV
DSS
I
DSS
V
GS
= 0v, I
D
= 250
μ
A
V
DS
= 100V, V
GS
= 0
V
DS
= 80V, V
GS
= 0V, , T
C
= +150
°
C
V
GS
= 15V
V
GS
=
–
15V
100
–
–
V
μ
A
μ
A
nA
Drain
–
to
–
Source Leakage Current
–
–
1
–
–
10
Gate
–
Source Leakage Forward
I
GSS
I
GSS
–
–
100
Gate
–
Source Leakage Reverse
–
–
–
100
nA
ON
(Note 5)
Gate Threshold Voltage
V
GS(th)
R
DS(on)
I
D(on)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 5V, I
D
= 10A
V
DS
> I
D(on)
x R
DS(on)
max, V
GS
= 10V
1.0
1.6
2.5
V
A
Static Drain
–
Source ON Resistance
–
0.09
–
0.12
–
On
–
State Drain Current
20
Dynamic
Forward Transconductance
g
fs
V
DS
> I
D(on)
x R
DS(on)
max, I
D
= 10A,
Note 5
10
16
–
mhos
Input Capacitance
C
iss
C
oss
C
rss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
–
1200
1500
pF
Output Capacitance
–
250
350
pF
Reverse Transfer Capacitance
–
60
90
pF
Switching
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 5V, I
D
= 20A, V
DD
= 80V
–
22
30
nC
Gate
–
Source Charge
–
6
–
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
12
–
nC
Turn
–
On Delay Time
V
DD
= 30V
,
I
D
= 10A, R
G
= 50
,
V
GS
= 5V
–
50
70
ns
Rise Time
–
140
200
ns
Turn
–
Off Delay Time
V
DD
= 80V
,
I
D
= 20A, R
G
= 50
,
V
GS
= 5V
–
80
110
ns
Fall Time
–
80
110
ns
Source
–
Drain Diode Ratings and Characteristics
Continuous Source Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
(Body Diode)
–
–
20
A
Pulse Source Current
(Body Diode) Note 1
–
–
80
A
Diode Forward Voltage
I
SD
= 20A, V
GS
= 0V, Note 5
T
J
= +150
°
C, V
DD
= 50V, I
SD
= 20A,
di/dt = 100A/
μ
s
–
–
1.5
V
Reverse Recovery Time
–
130
–
ns
μ
C
A
Reverse Recovery Charge
–
–
0.4
6
–
–
Reverse Recovery Current
Note 1. Pulse width limited by safe operating area.
Note 5. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 1.5%.
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