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參數(shù)資料
| 型號： | NTE3303 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| 中文描述： | 絕緣柵雙極晶體管N溝道增強模式，高速開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE3303 |
NTE3001
Light Emitting Diode
Miniature, Diffused Red
Description:
The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package
with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light
which peaks at 660nm.
The NTE3001 is intended for high volume indicator light applications where low cost, high reliability,
and top performance are required. Major usage is in applications such as diagnostic lights on printed
circuit boards and panel lights. This device can be used to displace subminiature lamps as small as
T3/4 size.
Features:
Low Cost
Bright
Compatible with Integrated Circuits
Long Life, Rugged
Small Size: T–3/4
Easily Assembled in Arrays
Absolute Maximum Ratings:
Power Dissipation (T
A
= +25
°
C)
Derate linearly from 25
°
C
Forward Current
Continuous
Peak (1
μ
sec pulse width, 0.3% duty cycle)
Reverse Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 5sec max, Note 1)
80mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6mW/
°
C
40mA
1.0A
5.0V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to 100
°
C
–55
°
to 100
°
C
+230
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Characteristics:
Wavelength Temperature Coefficient (Case Temperature)
Forward Voltage Temperature Coefficient
0.3nm/
°
C
–2.0mV/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The leads of the device were immersed in molten solder at +230
°
C to a point 1/16 inch from
the body of the device with a dwell time of 5 seconds.
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