參數(shù)資料
型號(hào)： NTE3303
廠商： NTE Electronics, Inc.
英文描述： Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
中文描述： 絕緣柵雙極晶體管N溝道增強(qiáng)模式，高速開(kāi)關(guān)
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 19K
代理商： NTE3303
Electro–Optical Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
Luminous Intensity
I
F
= 20mA, Note 2, Note 4
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
V = 0
0.4
1.0
–
mcd
Peak Emission Wavelength
–
660
–
nm
Spectral Line Halfwidth
–
20
–
nm
Forward Voltage
–
1.65
2.0
V
Capacitance
–
80
–
pF
Rise and Fall Time
50
system, I
F
= 20mA
V
R
= 3.0V
Between 50% points
–
50
–
ns
Reverse Current
–
5.0
–
nA
View Angle
–
80
–
degrees
Note 2. As measured with a Photo Research Corp.
“
SPECTRA
”
Microcandela Meter (Model IV
–
D)
Note 3. The axis of spatial distribution are typically within a 10
°
cone with reference to the central
axis of the device.
Note 4. Luminous intensity guaranteed to a 2.5% AQL inspection plan.
Green Mark
Indicates Cathode (
–
)
.025 (0.65)
.038 (0.98) R
.100 (2.54)
.020 (.508)
.085 (2.18)
.055 (1.4)
.010 (.254)
.095 (2.42)
.015 (0.39)
15
°
.250
(6.35)
Min
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