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參數資料
| 型號： | NTE2988 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125 |
| 中文描述： | MOSFET的N溝道，增強模式高速開關 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE2988 |
NTE2988
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Description:
The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type
package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.
Features:
High Input Impedance
Extremely Fast Switching
Rugged–Dissipation Limited SOA
Internal Drain–Source Diode
Benefits:
Reduced Component Count
Simpler Designs – Directly Interfaces CMOS & TTL
Improved Circuit Performance
Increased Reliability
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Drain–Source Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current
Continuous (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Dissipation (T
C
= +25
°
C)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Linear Derating Factor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
L
Note 1. Limited by package dissipation.
Note 2. Pulse test – 80
μ
s to 300
μ
s, 1% duty cycle.
60V
60V
100mA
+15V, –0.3V
±
0.2A
±
1.0A
315mW
2.5mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
+300
°
C
. . . . . . . . . . . . . . . . . . . . .
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