參數(shù)資料
型號： NTE2988
廠商： NTE Electronics, Inc.
英文描述： Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125
中文描述： MOSFET的N溝道，增強模式高速開關(guān)
文件頁數(shù)： 2/2頁
文件大?。?/td> 24K
代理商： NTE2988
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Drain
–
Source Breakdown Voltage
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
I
D
= 1000
μ
A, V
GS
= 0
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 15V, V
DS
= 0
V
DS
= 50V, V
GS
= 0
V
GS
= 5V, I
D
= 0.2A, Note 2
V
GS
= 10V, I
D
= 0.5A, Note 2
V
GS
= 5V, I
D
= 0.2A, Note 2
V
GS
= 10V, I
D
= 0.5A, Note 2
60
–
–
V
Gate Threshold Voltage
0.8
–
2.5
V
Gate
–
Body Leakage
–
–
100
nA
μ
A
V
Zero Gate Voltage Drain Current
–
–
10
On
–
State Drain Current
–
–
1.5
–
–
2.5
V
Static
–
Drain
–
Source On
–
State
Resistance
r
DS(on)
–
–
7.5
–
–
5.0
Dynamic Characteristics
Forward Transconductance
g
fs
C
iss
C
rss
C
oss
t
ON
t
OFF
V
DS
= 15V, I
D
= 0.5A, Note 2
V
DS
= 25V, f = 1MHz
200
–
–
mS
Input Capacitance
–
–
60
pF
Reverse Transfer Capacitance
–
–
5
pF
Common Source Output Capacitance
–
–
25
pF
Turn
–
On Time
V
DD
= 15V, R
L
= 23
, R
g
= 25
,
I
D
= 0.6A
–
–
10
ns
Turn
–
Off Time
–
–
10
ns
Drain
–
Source Diode Characteristics
Forward ON Voltage
V
SD
t
rr
I
S
=
–
0.5A, V
GS
= 0, Note 2
V
GS
= 0, I
F
= I
R
= 0.5A
–
–
0.85
–
V
Reverse Recovery Time
–
160
–
ns
Note 2. Pulse test
–
80
μ
s to 300
μ
s, 1% duty cycle.
45
°
.040 (1.01)
.019 (0.5) Dia
Source
Gate
Drain/Case
.230 (5.84) Dia Max
195 (4.95) Dia Max
.150 (3.81)
Max
.500 (12.7)
Min
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PDF描述
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