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參數(shù)資料
| 型號： | NTE2989 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125 |
| 中文描述： | MOSFET的N溝道，增強模式高速開關 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 25K |
| 代理商： | NTE2989 |
NTE2989
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
High Speed Switching
Low On–Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
Repetitive Avalanche Rated
Applications:
Switching Regulators
UPS
DC–DC Converters
General Purpose Power Amplifier
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current, Repetitive or Non–Repetitive (T
ch
≤
+150
°
C), I
AR
Avalanche Energy, E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
600V
10A
36A
±
30V
10A
64.7mJ
50W
+150
°
C
. . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
62.5
°
C/W
2.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
I
DSS
I
D
= 1mA, V
GS
= 0V
I
D
= 1mA, V
DS
= V
GS
V
DS
= 600V,
V
GS
= 0V
600
–
–
V
Gate Threshold Voltage
3.5
4.0
4.5
V
μ
A
mA
Zero Gate Voltage Drain Current
T
ch
= +25
°
C
T
ch
= +125
°
C
–
10
500
–
0.2
1.0
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