參數(shù)資料
型號(hào)： NTE2989
廠商： NTE Electronics, Inc.
英文描述： Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125
中文描述： MOSFET的N溝道，增強(qiáng)模式高速開關(guān)
文件頁數(shù)： 2/2頁
文件大?。?/td> 25K
代理商： NTE2989
Electrical Characteristics (Cont
’
d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate
–
Source Leakage Current
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
V
GS
=
±
30V, V
DS
= 0V
I
D
= 4.5A, V
GS
= 10V
I
D
= 5A, V
DS
= 25V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
–
10
100
nA
S
Drain
–
Source On
–
State Resistance
–
0.85
1.0
Forward Transconductance
3
6
–
Input Capacitance
Output Capacitance
–
1100
1700
pF
–
170
260
pF
Reverse Transfer Capacitance
–
74
120
pF
Turn
–
On Time, t
on
(t
on
= t
d(on)
+ t
r
)
V
CC
= 300V, I
D
= 10A, V
GS
= 10V,
R
GS
= 10
–
25
40
ns
–
70
110
ns
Turn
–
Off Time, t
o
ff
(t
off
= t
d(off)
+ t
f
)
–
75
120
ns
–
40
60
ns
Avalanche Capability
L = 100
μ
H, T
ch
= +25
°
C
I
F
= 2 x I
DR
, V
GS
= 0V, T
ch
= +25
°
C
I
F
= I
DR
, V
GS
= 0V,
–
dI
F
/dt = 100A/
μ
s, T
ch
= +25
C
10
–
–
A
Diode Forward On
–
Voltage
–
1.0
1.5
V
Reverse Recovery Time
°
–
500
–
ns
μ
C
Reverse Recovery Charge
–
6.5
–
.126 (3.2) Dia Max
.181 (4.6)
Max
.405 (10.3)
Max
.114 (2.9)
.252
(6.4)
G
D
S
Isol
.100 (2.54)
.098 (2.5)
.622
(15.0)
Max
.531
(13.5)
Min
.118
(3.0)
Max
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