參數(shù)資料
型號(hào)： NTE2987
廠商： NTE Electronics, Inc.
英文描述： Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125
中文描述： 邏輯電平MOSFET N溝道，增強(qiáng)模式高速開(kāi)關(guān)
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 26K
代理商： NTE2987
NTE2987
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
Avalanche Rugged Technology
Logic Level Gate Drive
R
DS
(on) = 0.09
Typ. at V
GS
= 5V
+175
°
C Operating Temperature
Fast Switching
Low Gate Charge
High Current Capability
Absolute Maximum Ratings:
Drain Current, I
D
Continuous
T
C
= +25
°
C
T
C
= +100
°
C
Pulsed (Note 1)
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Gate–Source Voltage, V
GS
Avalanche Current, Repetitive or Non–Repetitive (Note 2), I
AR
Single Pulsed Avalanche Energy (Note 3), E
AS
Repetitive Avalanche Energy (Note 2), E
AR
Avalanche Current, Repetitive or Non–Repetitive (Note 4), I
AR
Drain–Source Voltage (V
GS
= 0), V
DS
Drain–Gate Voltage (R
GS
= 20k
), V
DGR
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
L
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by T
J
max, Duty Cycle < 1%.
Note 3. V
DD
= 25V, I
D
= I
AR
, Starting T
J
= +175
°
C.
Note 4. T
C
= +100
°
C, Pulse width limited by T
J
max, Duty Cycle < 1%.
20A
14A
80A
105W
0.7W/
°
C
±
15V
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . .
120mJ
30mJ
14A
100V
100V
+175
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +175
°
C
. . . . . . . . . .
+300
°
C
1.43
°
C/W
0.5
°
C/W
62.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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