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參數(shù)資料
| 型號： | NTE2945 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | SM DIO/SMBJ12A SMB UNI-DIR |
| 中文描述： | MOSFET的N溝道，增強模式高速開關(guān) |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | NTE2945 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain
–
Source Breakdown Voltage
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
V
GS
= 0v, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 20V
V
GS
=
–
20V
V
DS
= Max. Rating, V
GS
= 0
V
DS
= 0.8 Max. Rating, T
C
= +125
°
C
V
GS
= 10V, I
D
= 5A, Note 4
V
DS
≥
50V, I
D
= 5A, Note 4
V
GS
= 0V, V
DS
= 25V, f = 1MHz
450
–
–
V
Gate Threshold Voltage
2.0
–
4.0
V
Gate
–
Source Leakage Forward
–
–
100
nA
Gate
–
Source Leakage Reverse
–
–
–
100
nA
μ
A
μ
A
mhos
Zero Gate Voltage Drain Current
–
–
250
–
–
1000
Static Drain
–
Source ON Resistance
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
–
–
0.55
Forward Transconductance
5.8
8.7
–
Input Capacitance
–
1500
–
pF
Output Capacitance
–
170
–
pF
Reverse Transfer Capacitance
–
75
–
pF
Turn
–
On Delay Time
V
DD
= 0.5 BV
DSS,
I
D
= 10A, Z
O
= 9.1
,
(MOSFET switching times are essentially
independent of operating temperature)
–
14
21
ns
Rise Time
–
27
41
ns
Turn
–
Off Delay Time
–
50
75
ns
Fall Time
–
24
36
ns
Total Gate Charge
(Gate
–
Source Plus Gate
–
Drain)
Q
g
Q
gs
Q
gd
V
GS
= 10V, I
D
= 10A, V
DS
= 0.8 Max.
Rating, (Gate charge is essentially
independent of operating temperature)
–
–
79
nC
Gate
–
Source Charge
–
1013
–
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
32.3
–
nC
Source
–
Drain Diode Ratings and Characteristics
Continuous Source Current
I
S
I
SM
V
SD
t
rr
(Body Diode)
–
–
10
A
Pulse Source Current
(Body Diode) Note 2
T
J
= +25
°
C, I
S
= 10A, V
GS
= 0V, Note 4
T
J
= +25
°
C, I
F
= 10A, dI
F
/dt = 100A/
μ
s
–
–
40
A
Diode Forward Voltage
–
–
2
V
Reverse Recovery Time
–
370
–
ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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