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參數(shù)資料
| 型號(hào)： | NTE2764 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit NMOS, 64K Erasable EPROM, 200ns |
| 中文描述： | 集成電路NMOS管，64K的可擦寫存儲(chǔ)器，200ns內(nèi) |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 33K |
| 代理商： | NTE2764 |
NTE2764
Integrated Circuit
NMOS, 64K Erasable EPROM, 200ns
Description:
The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable
Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V sup-
ply, making it ideal for microprocessor applications. It features an output enable control and offers
a standby mode with an attendant 67% savings in power consumption.
A distinctive feature of the NTE2764 is a separate output control, output enable (OE) from the chip
enable control (CE). The OE control eliminates bus contention in multiple–bus microprocessor sys-
tems. The NTE2764 features fast, simple one–pulse programming controlled by TTL–level signals.
Total programming time for all 65,536 bits is 420 seconds.
Features:
Ultraviolet Erasable and Electrically Programmable
Access Time: 250ns Max
Single Location Programming
Programmable with Single Pulse
Low Power Dissipation: 150mA Max (Active Current)
50mA Max (Standby Current)
Input/Output TTL Compatible for Reading and Programming
Single +5V Power Supply
Three–State Outputs
Absolute Maximum Ratings:
(T
A
= +25
°
C, Note 1 unless otherwise specified)
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage, V
PP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltage, V
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Exposing the device to stresses above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside
the limits described in the operational sections of this specification. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
–0.6 to +6V
–0.6 to +22V
–0.6 to +6V
–0.6 to +6V
–10
°
C to +80
°
C
–65
°
C to +125
°
C
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| NTE278 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 1.2GHZ 20V TO39 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 1.2GHZ, 20V, TO39 制造商:NTE Electronics 功能描述:T-NPN-SI-BROADBAND RF AMP 制造商:NTE Electronics 功能描述:TO-39 NPN RF AMP 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN, 20V, 1.2GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:1.2GHz; Power Dissipation Pd:2.5W; DC Collector Current:400mA; DC Current Gain hFE:40; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 |
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| NTE27C1001-12D | 制造商:NTE Electronics 功能描述: 制造商:NTE Electronics 功能描述:EPROM 1MB(128K X 8)120NS |
| NTE27C1001-15D | 制造商:NTE Electronics 功能描述:EPROM 1MB(128K X 8)150NS |
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