參數(shù)資料
型號(hào): NTE280
廠商: NTE Electronics, Inc.
英文描述: Silicon Complementary Trasistors Audio Power Amplifier
中文描述: 硅互補(bǔ)Trasistors音頻功率放大器
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 22K
代理商: NTE280
NTE280 (NPN) & NTE281 (PNP)
Silicon Complementary Trasistors
Audio Power Amplifier
Description:
The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package
designed for use in high power, high fidelity audio frequency amplifier applications.
Features:
High Power Dissipation: P
C
= 100W
Collector–Emitter Breakdown Voltage: V
(BR)CEO
= 140V
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
140V
140V
5V
12A
–12A
100W
+150
°
C
–65
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
cb
I
C
= 100mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 2A
I
C
= 7A, I
B
= 700mA
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 2A
V
CE
= 10V, I
E
= 0, f = 1MHz
140
V
Emitter–Base Breakdown Voltage
5
V
μ
A
μ
A
Collector Cutoff Current
100
Emitter Cutoff Current
100
DC Current Gain
40
140
Collector–Emitter Saturation Voltage
3.0
V
Base–Emitter ON Voltage
2.5
V
Current–Gain Bandwidth Product
5
MHz
Output Capacitance
220
pF
Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and
NTE281 (PNP).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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NTE282 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor Final RF Power Amp, Switch
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