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參數(shù)資料
| 型號： | NTE288 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Voltage, General Purpose Amplifier |
| 中文描述： | 硅晶體管互補高電壓，通用放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE288 |
NTE287 (NPN) & NTE288 (PNP)
Silicon Complementary Transistors
High Voltage, General Purpose Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBE
Emitter–Base Voltage, V
EBO
NTE287
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE288
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation @ T
A
= +25
°
C, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation @ T
C
= +25
°
C, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V
5V
500mA
625mW
5mW/
°
C
1.5W
12mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
200
°
C/mW
83.3
°
C/mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
NTE287
NTE288
Collector Cutoff Current
NTE287
NTE288
Emitter Cutoff Current
NTE287
NTE288
Symbol
Test Conditions
Min
Typ
Max
Unit
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 1
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
300
300
–
–
–
–
V
V
6
5
–
–
–
–
V
V
I
CBO
V
CB
= 200V, I
E
= 0
–
–
–
–
0.1
0.25
μ
A
μ
A
I
EBO
V
EB
= 6V, I
C
= 0
V
EB
= 3V, I
C
= 0
–
–
–
–
0.1
0.1
μ
A
μ
A
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| NTE288H | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 350V IC=0.5A TO-92 CASE HIGH VOLTAGE AMP |
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