參數(shù)資料
型號： NTE289A
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Audio Power Amplifier
中文描述： 硅互補(bǔ)晶體管音頻功率放大器
文件頁數(shù)： 1/2頁
文件大小： 21K
代理商： NTE289A
NTE289A (NPN) & NTE290A (PNP)
Silicon Complementary Transistors
Audio Power Amplifier
Features:
High Breakdown Voltage: V
(BR)CEO
= 80V Min
High Current: I
C
= 500mA
Low Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current , I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V
80V
5V
500mA
800mA
600mW
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherewise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, R
BE
= Open
I
E
= 10
μ
A, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 400mA (Pulse)
100
–
–
V
Collector–Emitter Breakdown Voltage
80
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
1.0
Emitter Cutoff Current
–
–
1.0
DC Current Gain
100
–
200
35
–
–
Collector–Emitter Saturation Voltage
NTE289A
I
C
= 400mA, I
B
= 40mA
–
0.2
0.6
V
NTE290A
–
0.25
0.60
V
Current–Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 10mA
–
120
–
MHz
Output Capacitance
NTE289A
C
ob
V
CB
= 10V, f = 1MHz
–
5
–
pF
NTE290A
–
9
–
pF
Note 1. NTE289AMP is a matched pair of NTE289A with their DC Current Gain (h
FE
) matched to
within 10% of each other.
Note 2. NTE290AMCP is a matched complementary pair containing 1 each of NTE289A (NPN) and
NTE290A (PNP).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE289AMP 制造商:NTE Electronics 功能描述:NTE289A (NPN) Matched Silicon Transistors
NTE289MP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 30V 0.8A 3-Pin
NTE29 制造商:NTE Electronics 功能描述:T-NPN-SI-HIGH POWER AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3
NTE290 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 35V IC-0.8A TO-92 CASE AUDIO AMP AND SWITCH COMP'L TO NTE 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -30V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -30V TO-92 制造商:NTE Electronics 功能描述:T-PNP-SI AF POWER AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -30V TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:600mW; DC Collector Current:-800mA; DC Current Gain hFE:120 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 30V 0.8A 3-Pin
NTE2900 制造商:NTE Electronics 功能描述:High Speed Mosfet N-Ch Enhancement Mode 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 250V 14A 3-Pin(3+Tab) TO-220
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