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參數(shù)資料
| 型號(hào)： | NTE2377 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-SOIC -40 to 125 |
| 中文描述： | MOSFET的N溝道，增強(qiáng)模式，高速 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2377 |
NTE283
Silicon NPN Transistor
Horizontal Output, Switch
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high–
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
Collector–Emitter Voltage (I
B
= 0), V
CEO
Collector–Emitter Voltage (V
BE
= 0), V
CES
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
p
≤
10ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
≤
+25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
325V
800V
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A
15A
3A
100W
+200
°
C
–65
°
to +200
°
C
1.75
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
I
EBO
V
CBO
V
CEO(su
s)
V
CE(sat)
V
BE(sat)
h
FE
f
T
I
S/b
V
CEV
= 800V, V
BE
= 0
V
EB
= 8V, I
C
= 0
I
C
= 1mA, I
E
= 0
I
C
= 100mA, I
B
= 0, Note 1
–
–
1
mA
Emitter Cutoff Current
–
–
1
mA
Collector–Base Voltage
800
–
–
V
Collector–Emitter Sustaining Voltage
325
–
–
V
Collector–Emitter Saturation Voltage
I
C
= 8A, I
B
= 2.5A, Note 1
I
C
= 8A, I
B
= 2.5A, Note 1
V
CE
= 10V, I
C
= 2.5A, Note 1
V
CE
= 10V, I
C
= 500mA
V
CE
= 25V, Note 2
–
–
3.3
V
Base–Emitter Saturation Voltage
–
–
2.2
V
DC Current Gain
15
–
–
Current Gain–Bandwidth Product
–
10
–
MHz
Second Breakdown Collector Current
4
–
–
A
Note 1. Pulse test: Pulse Width = 300
μ
s, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, non–repetitive pulse.
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