參數(shù)資料
型號： NTE282
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Final RF Power Amp, Switch
中文描述： 硅NPN晶體管最后射頻功率放大器，開關(guān)
文件頁數(shù)： 1/2頁
文件大?。?/td> 22K
代理商： NTE282
NTE282
Silicon NPN Transistor
Final RF Power Amp, Switch
Applications:
HF Power Amplifiers, Switchings
27MHz, 4W, AM, Citizens Band Transmitter Output Stage
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V
60V
6V
4A
800mA
10W
+175
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
V
Collector Cutoff Current
I
CBO
I
EBO
V
CBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
C
ob
C
c
r
bb’
f
T
P
O
P G
V
CB
= 50V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 100
μ
A
I
C
= 10mA
I
C
= 2A, I
B
= 400mA
I
C
= 2A, I
B
= 400mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 2A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 10V, I
E
= –15mA, f = 31.9MHz
V
CB
= 10V, I
E
= –100mA
P
IN
= 400mW, V
CC
= 12V
f = 27MHz
–
–
1
Emitter Cutoff curent
–
–
2
Collector–Base Voltage
100
–
–
Collector–Emitter Sustaining Voltage
60
–
–
V
Collector–Emitter Saturation Voltage
–
0.3
0.8
V
Base–Emitter Saturation Voltage
–
1.0
1.4
V
DC Current Gain
27
100
264
–
60
–
Output Capacitance
–
45
60
pF
Collector–Base Time Constant
–
35
70
ps
Gain Bandwidth Product
70
140
–
MHz
Power Output
4
6
–
W
Power Gain
10
–
–
dB
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NTE284 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 180V IC=16A TO-3 AUDIO AMP OUTPUT COMP'L TO NTE285 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 180V 16A TO-3 制造商:NTE Electronics 功能描述:T-NPN- SI-AF POPD 150 W 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 180V, 16A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency Typ ft:6MHz; Power Dissipation Pd:150W; DC Collector Current:16A; DC Current Gain hFE:70; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 180V 16A 3-Pin(2+Tab) TO-3
NTE284MP 制造商:NTE Electronics 功能描述:MATCH PR NTE284
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