參數(shù)資料
型號: NTE278
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor Broadband RF Amp
中文描述: 硅NPN晶體管寬帶RF放大器
文件頁數(shù): 1/2頁
文件大?。?/td> 23K
代理商: NTE278
NTE278
Silicon NPN Transistor
Broadband RF Amp
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
High Current–Gain Bandwidth Product: f
T
= 1200MHz Min @ I
C
= 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Continuous Base Current, I
B
Total Device Dissipation (T
C
= +75
°
C, Note 1), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Note 1. Total Device Dissipation at T
A
= +25
°
C is 1 Watt.
20V
40V
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA
400mA
2.5W
20mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 5mA, I
B
= 0
V
CER(sus)
I
C
= 5mA, R
BE
= 10
, Note 2
I
CEO
V
CE
= 15V, I
B
= 0
I
CEX
V
CE
= 15V, V
BE
= –1.5V, T
C
= +150
°
C
V
CE
= 35V, V
BE
= –1.5V
I
EBO
V
BE
= 3V, I
C
= 0
20
V
40
V
μ
A
mA
Collector Cutoff Current
20
5
5
mA
μ
A
Emitter Cutoff Current
100
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.
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