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參數(shù)資料
| 型號： | NTE274 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Darlington Power Amplifier, Switch |
| 中文描述： | 硅達林頓晶體管互補功率放大器，開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | NTE274 |
NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.
Features:
High DC Current Gain: h
FE
= 3000 Typ @ I
C
= 2A
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 2A
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 80V Min
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V
80V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80mA
50W
0.286W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
3.5
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 50mA, I
B
= 0
I
CEO
V
CE
= 40V, I
B
= 0
I
CER
V
CE
= 80V, V
EB(off)
= 1.5V
V
CB
= 80V, V
EB(off)
= 1.5V, T
A
= +150
°
C
I
EBO
V
BE
= 5V, I
C
= 0
80
–
–
V
Collector Cutoff Current
–
–
0.5
mA
–
–
0.5
mA
–
–
5.0
mA
Emitter Cutoff Current
–
–
2.0
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE275 | 制造商:NTE Electronics 功能描述:Trans Darlington PNP 80V 8A 2-Pin(2+Tab) TO-66 |
| NTE276 | 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:Thyristor SCR 1.25KV 80A 4-Pin(3+Tab) TO-66 |
| NTE2764 | 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT 64K EPROM NMOS 200NS 28-LEAD DIP UV ERASABLE 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:EPROM UV 64K-Bit 8K x 8 250ns 28-Pin PDIP |
| NTE278 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 1.2GHZ 20V TO39 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 1.2GHZ, 20V, TO39 制造商:NTE Electronics 功能描述:T-NPN-SI-BROADBAND RF AMP 制造商:NTE Electronics 功能描述:TO-39 NPN RF AMP 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN, 20V, 1.2GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:1.2GHz; Power Dissipation Pd:2.5W; DC Collector Current:400mA; DC Current Gain hFE:40; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 |
| NTE278 | 制造商:NTE Electronics 功能描述:RF TRANSISTOR NPN 20V 1.2GHZ |
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