參數(shù)資料
型號(hào): NTE272
廠商: NTE Electronics, Inc.
英文描述: Silicon Darlington Complementary Power Amplifiers
中文描述: 達(dá)林頓硅互補(bǔ)功率放大器
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 22K
代理商: NTE272
NTE272 (NPN) & NTE273 (PNP)
Silicon Darlington Complementary
Power Amplifiers
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
High DC Current Gain:
h
FE
= 25,000 (Min) @ I
C
= 200mA
= 15,000 (Min) @ I
C
= 500mA
Collector–Emitter Breakdown Voltage:
V
(BR)CES
= 40V @ I
C
= 500mA
Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 1.5V @ I
C
= 1A
Monolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector–Emitter Voltage (Note 2), V
CEO
Collector–Emitter Voltage, V
CES
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Total Power Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
Note 1.
NTE273
is a
discontinued
device and
no longer
available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
ments are identical. V
(BR)CES
is tested in lieu of V
(BR)CEO
in order to avoid errors caused
by noise pickup. The voltage measured during the V
(BR)CES
test is the V
(BR)CEO
of the output
transistor.
40V
40V
50V
12V
2A
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8mW/
°
C
10W
80mW/
°
C
–55 to +150
°
C
–55 to +150
°
C
125
°
C/W
12.5
°
C/W
相關(guān)PDF資料
PDF描述
NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM
NTE274 Silicon Complementary Transistors Darlington Power Amplifier, Switch
NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns
NTE278 Silicon NPN Transistor Broadband RF Amp
NTE280 Silicon Complementary Trasistors Audio Power Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE273 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon Darlington Complementary Power Amplifiers
NTE2732A 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT EPROM 32K NMOS 200NS 24-LEAD DIP UV ERASABLE 制造商:NTE Electronics 功能描述:IC UV EPROM 32K 制造商:NTE Electronics 功能描述:MEMORY EPROM 32KBIT 200NS 制造商:NTE Electronics 功能描述:MEMORY, EPROM, 32KBIT, 200NS, DIP-24 制造商:NTE Electronics 功能描述:IC-NMOS 32K EPROM 制造商:NTE Electronics 功能描述:MEMORY, EPROM, 32KBIT, 200NS, DIP-24; Memory Type:EPROM; Memory Size:32Kbit; Memory Configuration:4K x 8bit; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:24; Access Time:200ns ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:EPROM UV 32K-Bit 4K x 8 200ns 24-Pin PDIP
NTE274 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 80V 8A TO-6 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 80V, 8A, TO-66 制造商:NTE Electronics 功能描述:T-NPN- DARL 80 V- HFE3000 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 80V, 8A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:8A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Darlington NPN 80V 8A 2-Pin(2+Tab) TO-66
NTE275 制造商:NTE Electronics 功能描述:Trans Darlington PNP 80V 8A 2-Pin(2+Tab) TO-66
NTE276 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:Thyristor SCR 1.25KV 80A 4-Pin(3+Tab) TO-66