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參數(shù)資料
| 型號： | NTE2716 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit NMOS, 16K UV Erasable PROM |
| 中文描述： | 集成電路NMOS管，16K的紫外線可擦除可編程ROM |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 34K |
| 代理商： | NTE2716 |
NTE2716
Integrated Circuit
NMOS, 16K UV Erasable PROM
Description:
The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a
24–Lead DIP type package designed for system debug usage and similar applications requiring non-
volatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light.
The NTE2716 operates from a single power supply and has a static power down mode.
Features:
Single 5V Power Supply
Automatic Power–Down Mode (Standby)
Organized as 2048 Bytes of 8Bits
TTL Compatible During Read and Program
Access Time: 350ns
Output Enable Active Level is User Selectable
Absolute Maximum Ratings:
(Note 1)
All Input or Output Voltages (with respect to V
SS
)
V
PP
Supply Voltage (with respect to V
SS
)
Temperature Under Bias (V
PP
= 5V)
Operating Temperature Range, T
opr
Storage Temperature Range. T
stg
Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional op-
eration should be restricted to “Recommended Operating Conditions”. Exposure to higher
than recommended voltages for extended periods of time could affect device reliability.
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high–impedance circuit.
+6 to –0.3V
+28 to –0.3V
–10
°
to +80
°
C
0
°
to +70
°
C
–65
°
to +125
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE272 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON DARLINGTON 50V IC=2A TO-202N POWER AMP & SWITCH 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR NPN 40V 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR, NPN, 40V 制造商:NTE Electronics 功能描述:TO-202 NPN DAR PWR 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR, NPN, 40V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:2A; DC Current Gain hFE:65000; Operating Temperature Min:-55C; No. of Pins:3 制造商:NTE Electronics 功能描述:Trans Darlington NPN 40V 2A 3-Pin(3+Tab) TO-202 |
| NTE273 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon Darlington Complementary Power Amplifiers |
| NTE2732A | 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT EPROM 32K NMOS 200NS 24-LEAD DIP UV ERASABLE 制造商:NTE Electronics 功能描述:IC UV EPROM 32K 制造商:NTE Electronics 功能描述:MEMORY EPROM 32KBIT 200NS 制造商:NTE Electronics 功能描述:MEMORY, EPROM, 32KBIT, 200NS, DIP-24 制造商:NTE Electronics 功能描述:IC-NMOS 32K EPROM 制造商:NTE Electronics 功能描述:MEMORY, EPROM, 32KBIT, 200NS, DIP-24; Memory Type:EPROM; Memory Size:32Kbit; Memory Configuration:4K x 8bit; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:24; Access Time:200ns ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:EPROM UV 32K-Bit 4K x 8 200ns 24-Pin PDIP |
| NTE274 | 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 80V 8A TO-6 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 80V, 8A, TO-66 制造商:NTE Electronics 功能描述:T-NPN- DARL 80 V- HFE3000 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 80V, 8A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:8A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Darlington NPN 80V 8A 2-Pin(2+Tab) TO-66 |
| NTE275 | 制造商:NTE Electronics 功能描述:Trans Darlington PNP 80V 8A 2-Pin(2+Tab) TO-66 |
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