參數(shù)資料
型號(hào)： NTE2401
廠商： NTE Electronics, Inc.
英文描述： Silicon PNP Transistor RF Stages in FM Front Ends
中文描述： 硅PNP晶體管階段的FM射頻前端
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 22K
代理商： NTE2401
NTE2401
Silicon PNP Transistor
RF Stages in FM Front Ends
Description:
The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed
for use in RF stages in FM front–ends in common base configuration for SMD applications.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
DC Collector Current, I
C
Total Power Dissipation (T
A
≤
+25
°
C, Note 1), P
tot
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
30V
30V
4V
25mA
300mW
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
430K/W
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Collector Cutoff Current
I
CBO
Emitterr Cutoff Current
I
EBO
Base Current
I
B
Test Conditions
Min
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
80
22
0.76
350
450
440
0.1
3.0
3.5
Max
50
10
160
–
–
–
–
–
–
–
–
Unit
nA
μ
A
μ
A
μ
A
V
MHz
MHz
MHz
pF
dB
dB
V
CB
= 30V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 4mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 4mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 4mA
V
CE
= 10V, I
C
= 8mA
V
CE
= 10V, V
EB
= 0
V
CE
= 10V, I
C
= 2mA, G
s
= 16.7mS
V
CE
= 10V, I
C
= 5mA, G
s
= 6.7mS,
jB
s
= 5mS
Base–Emitter Voltage
Transition Frequency
V
BE
f
T
Feedback Capacitance
Noise Factor
C
rb
F
相關(guān)PDF資料
PDF描述
NTE2402 Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier
NTE2406 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)
NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406)
NTE2408 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409)
NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE2402 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 20V IC=0.25A SOT-23 CASE LOW NOISE UHF/VHF AMP SURFACE MO 制造商:NTE Electronics 功能描述:T-NPN-SI HIGH FREQ AMP 制造商:NTE Electronics 功能描述:SOT-23 NPN UHF/VHF 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN, 15V, 5GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:5GHz; Power Dissipation Pd:200mW; DC Collector Current:250mA; DC Current Gain hFE:50; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 15V 0.025A 3-Pin SOT-23
NTE2403 制造商:NTE Electronics 功能描述:T-PNP-SI UHF AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP UHF/VHF
NTE2404 制造商:NTE Electronics 功能描述: 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON DARLINGTON 40V IC=0.3A SOT-23 CASE SURFACE MOUNT COMP TO
NTE2405 制造商:NTE Electronics 功能描述:T-PNP-SI DARLINGTON 制造商:NTE Electronics 功能描述:Trans Darlington PNP 30V 0.3A 3-Pin SOT-23
NTE2406 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 75V IC=0.6A SOT-23 CASE GENERAL PURPOSE AMP SURFACE MOUNT 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 40V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 40V 制造商:NTE Electronics 功能描述:T-NPN-SI GEN PURP AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 40V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:100; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23
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