參數(shù)資料
型號: NTE2359
廠商: NTE Electronics, Inc.
英文描述: Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors
中文描述: 硅晶體管互補數(shù)字瓦特/ 2內(nèi)置47k偏置電阻
文件頁數(shù): 1/2頁
文件大小: 24K
代理商: NTE2359
NTE2359 (NPN) & NTE2360 (PNP)
Silicon Complementary Transistors
Digital
w
/2 Built–In 47k
Bias Resistors
Features:
Built–In Bias Resistor (R
1
= 47k
, R
2
= 47k
)
Small–Sized Package (TO92 type)
Applications:
Switching Circuit
Inverter
Interface Circuit
Driver
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
50V
10V
100mA
200mA
300mW
+150
°
C
–55
°
to +160
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
CEO
I
EBO
h
FE
f
T
V
CB
= 40V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
0.1
0.5
Emitter Cutoff Current
30
53
80
DC Current Gain
50
Gain Band–width Product
NTE2359
250
MHz
NTE2360
200
MHz
Output Capacitance
NTE2359
C
ob
V
CB
= 10V, f = 1MHz
3.7
pF
NTE2360
5.5
pF
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