參數(shù)資料
型號： NTE235
廠商： NTE Electronics, Inc.
英文描述： Dual Operational Amplifier 8-SOIC -25 to 85
中文描述： 硅NPN晶體管決賽射頻輸出功率
文件頁數(shù)： 1/2頁
文件大小： 20K
代理商： NTE235
NTE235
Silicon NPN Transistor
Final RF Power Output
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output
amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage (R
BE
= 150
), V
CER
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +50
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75V
80V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A
5A
1.2W
10W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
C
=+25
°
C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 100
μ
A, I
B
= 0
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Output Capacitance
Power Output
Collector Efficiency
Symbol
Test Conditions
Min
Typ
Max Unit
80
75
5
–
–
25
–
–
100
–
4.0
60
–
–
–
–
–
–
–
–
–
V
V
V
μ
A
μ
A
V
(BR)CER
I
C
= 1mA, R
BE
= 150
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
I
CBO
V
CB
= 40V, I
E
= 0
I
EBO
V
EB
= 4V, I
C
= 0
h
FE
V
CE
= 5V, I
C
= 500mA
V
CE(sat)
I
C
= 1A, I
B
= 100mA
V
BE(sat)
I
C
= 1A, I
B
= 100mA
f
T
V
CE
= 10V, I
C
= 100mA
C
ob
V
CB
= 10V, f = 1MHz
P
O
V
CC
= 12V, P
in
= 0.2W,
η
10
10
200
0.6
1.2
–
60
–
–
0.15
0.9
150
45
–
–
V
V
MHz
pF
W
%
f = 27MHz
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