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參數(shù)資料
| 型號： | NTE2363 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Current General Purpose Amp/Switch |
| 中文描述： | 硅晶體管互補高電流通用放大器/開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2363 |
NTE2363 (NPN) & NTE2364 (PNP)
Silicon Complementary Transistors
High Current General Purpose Amp/Switch
Features:
Low Saturation Voltage
Large Current Capacity and Wide ASO
Applications:
Power Supplies
Relay Drivers
Lamp Drivers
Automotive Wiring
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Ambient Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For PNP device (NTE2364), voltage and current values are negative.
60V
50V
6V
2A
4A
1W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
f
T
Test Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 1.5A
V
CE
= 10V, I
C
= 50mA
Min
–
–
200
40
–
Typ
–
–
–
–
150
Max
0.1
0.1
400
–
–
Unit
μ
A
μ
A
Gain Bandwidth Product
MHz
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|---|---|
| NTE2364 | 制造商:NTE Electronics 功能描述:TRANSISTORBJTPNP50V V(BR)CE 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, -60V, -2A, TO- 制造商:NTE Electronics 功能描述:T-PNP-SI GEN PURP AMP 制造商:NTE Electronics 功能描述:TO-92 HI CUR GEN PUR 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, -60V, -2A, TO-92VAR-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:-2A; DC Current Gain hFE:40 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 50V 4A 3-Pin |
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