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參數(shù)資料
| 型號(hào)： | NTE2367 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors |
| 中文描述： | 硅晶體管互補(bǔ)數(shù)字瓦特/ 2內(nèi)置4.7K的偏置電阻 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | NTE2367 |
NTE2367 (NPN) & NTE2368 (PNP)
Silicon Complementary Transistors
Digital
w
/2 Built–In 4.7k
Bias Resistors
Features:
Built–In Bias Resistor (R
1
= 4.7k
, R
2
= 4.7k
)
Small–Sized Package (TO92 type)
Applications:
Switching Circuit
Inverter
Interface Circuit
Driver
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
NTE2367
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2368
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
50V
10V
100mA
200mA
300mW
200mW
+150
°
C
–55
°
to +160
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
CEO
I
EBO
h
FE
f
T
V
CB
= 40V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 5mA
–
–
0.1
–
–
0.5
Emitter Cutoff Current
170
250
330
DC Current Gain
30
–
–
Current Gain–Bandwidth Product
NTE2367
–
250
–
MHz
NTE2368
–
200
–
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
–
3.0
–
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTE2368 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors |
| NTE2369 | 制造商:NTE Electronics 功能描述:T-NPN-SI DIGITAL 4.7K/47K 制造商:NTE Electronics 功能描述:TO-92 NPN 2 4.7K RES' |
| NTE237 | 制造商:NTE Electronics 功能描述:T-NPN- SI-VHF PO 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 2A 4-Pin(3+Tab) TO-39 |
| NTE2370 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 50V IC=0.1A TO-92 TYPE CASE W/2 BUILT-IN 4.7K BIAS RESIST |
| NTE2371 | 制造商:NTE Electronics 功能描述:POWER MOSFET P-CHANNEL 100V ID=19A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:IC P-CH HIGH SPEED SWITCH 19A TO220-3 制造商:NTE Electronics 功能描述:IC, P-CH HIGH SPEED SWITCH, 19A, TO220-3 制造商:NTE Electronics 功能描述:PWR-MOSFET P-CHAN- 100V 制造商:NTE Electronics 功能描述:IC, P-CH HIGH SPEED SWITCH, 19A, TO220-3; No. of Pins:3; Operating Temperature Min:-55C; Operating Temperature Max:175C; Filter Terminals:Through Hole; Leakage Current:500A; Mounting Type:Through Hole; No. of Channels:1 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET P-CH 100V 19A 3-Pin(3+Tab) TO-220 |
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