參數(shù)資料
型號： NTE2371
廠商： NTE Electronics, Inc.
英文描述： MOSFET P-Ch, Enhancement Mode High Speed Switch
中文描述： MOSFET的的P -通道，增強模式高速開關
文件頁數(shù)： 1/3頁
文件大?。?/td> 28K
代理商： NTE2371
NTE2371
MOSFET
P–Ch, Enhancement Mode
High Speed Switch
Features:
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P–Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
GS
= 10V), I
D
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–to–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
L
Mounting Torque (6–32 or M3 Screw)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
thCS
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
DD
= 25V, starting T
J
= +25
°
C, L = 2.7mH, R
G
= 25
, I
AS
= 19A
Note 3. I
SD
≤
19A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
+175
°
C
Note 4. Pules Width
≤
300
μ
s, Duty Cycle
≤
2%.
19A
13A
72A
150W
1.0W/
°
C
±
20
640mJ
19A
5.5V/ns
–55
°
to +175
°
C
–55
°
to +175
°
C
+300
°
C
. . . . . . . . . . . . . . . . .
10 lbf in (1.1N m)
1.0
°
C/W
62
°
C/W
0.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
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