參數(shù)資料
型號： NTE2375
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-SOIC -40 to 125
中文描述： MOSFET的N溝道，增強模式高速開關
文件頁數(shù)： 1/3頁
文件大小： 29K
代理商： NTE2375
NTE2375
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
GS
= 10V), I
D
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–to–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
L
Mounting Torque (6–32 or M3 Screw)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
thCS
41A
29A
120A
230W
1.5W/
°
C
±
20V
830mJ
41A
19mJ
5.5V/ns
–55
°
to +175
°
C
–55
°
to +175
°
C
+300
°
C
. . . . . . . . . . . . . . . . .
10 lbf in (1.1N m)
0.65
°
C/W
40
°
C/W
0.24
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . .
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
DD
= 25V, starting T
J
= +25
°
C, L = 740
μ
H, R
G
= 25
, I
AS
= 41A
Note 3. I
SD
≤
41A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
+175
°
C
相關PDF資料
PDF描述
NTE2376 Quad Differential Comparator 14-SOIC -40 to 125
NTE2378 Quad Differential Comparator 14-PDIP -40 to 125
NTE2379 Quad Differential Comparator 14-PDIP -40 to 125
NTE2380 Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
NTE2382 Quad Differential Comparator 14-SO -40 to 125
相關代理商/技術參數(shù)
參數(shù)描述
NTE2376 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET 200V 30A TO-247 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 200V, 30A, TO-247 制造商:NTE Electronics 功能描述:MOSFET N-Ch, Enhancement Mode High Speed Switch 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 200V, 30A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247
NTE2377 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 900V ID=8A TO-3P CASE HIGH SPEED SWITCH ENHANCEMENT MODE 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET 900V 8A TO-3P 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 900V, 8A, TO-3P 制造商:NTE Electronics 功能描述:MOSFET-PWRN-CHANNEL 制造商:NTE Electronics 功能描述:TO-3P N-CH 900V 8A 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 900V, 8A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P
NTE2378 制造商:NTE Electronics 功能描述:MOSFET-PWR N CHANNEL 制造商:NTE Electronics 功能描述:TO-3P N-CH 900V 3.6A
NTE2379 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 600V ID=6.2A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MO 制造商:NTE Electronics 功能描述:IC N-CH HIGH SPEED SWITCH 6.2A TO220-3 制造商:NTE Electronics 功能描述:IC, N-CH HIGH SPEED SWITCH 6.2A, TO220-3 制造商:NTE Electronics 功能描述:PWR MOSFET-N CHAN 600V-6A 制造商:NTE Electronics 功能描述:IC, N-CH HIGH SPEED SWITCH 6.2A, TO220-3; No. of Pins:3; Operating Temperature Min:-55C; Operating Temperature Max:150C; Filter Terminals:Through Hole; Leakage Current:500A; Mounting Type:Through Hole; No. of Channels:1 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220
NTE238 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 1500V IC=8A TO-3 CASE HORIZONTAL OUTPUT FOR COLOR TV 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 750V TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 750V, TO-3 制造商:NTE Electronics 功能描述:T-NPN-SI-HORIZ-DEFL 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 750V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:750V; Power Dissipation Pd:100W; DC Collector Current:8A; DC Current Gain hFE:8; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 750V 8A 3-Pin(2+Tab) TO-3
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*