參數(shù)資料
型號： NTE2379
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-PDIP -40 to 125
中文描述： MOSFET的N溝道，增強模式高速開關(guān)
文件頁數(shù)： 1/3頁
文件大?。?/td> 26K
代理商： NTE2379
NTE2379
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Absolute Maximum Ratings:
Gate–Source Voltage, V
GS
Drain Current, I
D
Continuous (V
GS
= 10V)
T
C
= +25
°
C
T
C
= +100
°
C
Pulsed (Note 1)
Gate Current (Pulsed), I
GM
Single Pulsed Avalanche Energy (Note 2), E
AS
Avalanche Current (Note 1), I
AR
Repetitive Avalanche Energy (Note 1), E
AR
Peak Diode Recovery dv/dt (Note 3), dv/dt
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
L
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. V
DD
= 50V, starting T
J
= +25
°
C, l = 27mH, R
G
= 25
, I
AS
= 6.2A.
Note 3. I
SD
≤
6.2A, di/dt
≤
80A/
μ
A, V
DD
≤
V
(BR)DSS
, T
J
≤
+150
°
C.
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2A
3.9A
25A
±
1.5A
570mJ
6.2A
13mJ
3V/ns
125W
1.0W/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . . . .
+300
°
C
1.0
°
C/W
0.5
°
C/W
62
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . .
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相關(guān)PDF資料
PDF描述
NTE2380 Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
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