參數(shù)資料
型號： NTE2378
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-PDIP -40 to 125
中文描述： MOSFET的N溝道增強模式，高速開關(guān)
文件頁數(shù)： 1/2頁
文件大?。?/td> 22K
代理商： NTE2378
NTE2378
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
Low ON–State Resistance
Very High–Speed Switching
Converters
Absolute Maximum Ratings:
(T
A
= +25
°
C)
Drain–Source Voltage, V
DSS
Gate–Source Voltage, V
GSS
DC Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Channel Temperature, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
≤
10
μ
s, Duty Cycle
≤
1%.
Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and
source.
900V
±
30V
5A
10A
120W
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0
I
DSS
V
GS
= 0, V
DS
= 900V
I
GSS
V
DS
= 0, V
GS
=
±
30V
V
GS(off)
V
DS
= 10V, I
D
= 1mA
R
DS(on)
V
GS
= 10V, I
D
= 2A
g
fs
V
DS
= 20V, I
D
= 2A
900
–
–
V
Zero–Gate Voltage Drain Current
–
–
1.0
mA
Gate–Source Leakage Current
–
–
±
100
nA
Cutoff Voltage
2
–
3
V
Static Drain–Source On Resistance
–
2.8
3.6
Forward Transconductance
1.0
2.0
–
mho
相關(guān)PDF資料
PDF描述
NTE2379 Quad Differential Comparator 14-PDIP -40 to 125
NTE2380 Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
NTE2382 Quad Differential Comparator 14-SO -40 to 125
NTE2383 Quad Differential Comparator 14-TSSOP -40 to 125
NTE2384 Quad Differential Comparator 14-TSSOP -40 to 125
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