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參數(shù)資料
| 型號(hào)： | NTE2369 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors |
| 中文描述： | 硅晶體管互補(bǔ)數(shù)字瓦特/ 2內(nèi)置4.7K的偏置電阻 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE2369 |
NTE2369 (NPN) & NTE2370 (PNP)
Silicon Complementary Transistors
Digital
w
/2 Built–In 4.7k
Bias Resistors
Features:
Built–In Bias Resistor (R
1
= 4.7k
, R
2
= 4.7k
)
Small–Sized Package (TO92 type)
Applications:
Switching Circuit
Inverter
Interface Circuit
Driver
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
NTE2369
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2370
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
50V
10V
100mA
200mA
300mW
200mW
+150
°
C
–55
°
to +160
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
CEO
I
EBO
h
FE
f
T
V
CB
= 40V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 5mA
–
–
0.1
–
–
0.5
Emitter Cutoff Current
170
250
330
DC Current Gain
80
–
–
Current Gain–Bandwidth Product
NTE2369
–
250
–
MHz
NTE2370
–
200
–
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
–
3.0
–
pF
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