參數(shù)資料
型號: NTE2361
廠商: NTE Electronics, Inc.
英文描述: Micropower Voltage Reference 8-SOIC -40 to 85
中文描述: 硅晶體管互補高速開關
文件頁數(shù): 1/2頁
文件大?。?/td> 22K
代理商: NTE2361
NTE2361 (NPN) & NTE2362 (PNP)
Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for gener-
al–purpose amplifier and high speed switching applications. The high gain of these devices makes
it possible for them to be driven directly from integrated circuits.
Features:
Very Small–Sized Package
High Breakdown Voltage: V
CEO
= 50V
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V
50V
5V
500mA
800mA
300mW
–55
°
to +150
°
C
–55
°
to +150
°
C
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 40Vdc, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
BE
= 4Vdc
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10mA
200
400
Gain Bandwidth Product
f
T
V
CE
= 10V,
I
C
= 50mA
NTE2361
200
MHz
NTE2362
300
MHz
相關PDF資料
PDF描述
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