參數(shù)資料
型號(hào)： NTE2345
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors General Purpose Darlington, Power Amplifier
中文描述： 硅通用互補(bǔ)達(dá)林頓晶體管，功率放大器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 25K
代理商： NTE2345
NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT–82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
High DC Current Gain:
Junction Temperature to +150
°
C
h
FE
= 750 (Min) @ I
C
= 3A, V
CE
= 3V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
Peak (t
p
≤
10ms,
δ
≤
0.1)
Base Current, I
B
Total Power Dissipation (T
C
= +25
°
C), P
D
Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
120V
120V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mA
60W
+150
°
C
–65
°
to +150
°
C
2.08K/W
100K/W
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
E
= 0, V
CBO
= 120V
I
E
= 0, V
CBO
= 120V, T
J
= +150
°
C
I
B
= 0, V
CEO
= 60V
I
C
= 0, V
EBO
= 5V
I
C
= 500mA, V
CEO
= 3V, Note 1
I
C
= 3A, V
CEO
= 3V, Note 1
I
C
= 6A, V
CEO
= 3V, Note 1
–
–
0.2
mA
–
–
2mA
mA
I
CEO
I
EBO
h
FE
–
–
0.5
mA
Emitter Cutoff Current
–
–
5
mA
DC Current Gain
–
2700
–
750
–
–
–
400
–
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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