參數(shù)資料
型號： NTE2349
廠商： NTE Electronics, Inc.
英文描述： Quadruple Operational Amplifier 14-SOIC -25 to 85
中文描述： 高硅達林頓晶體管電流，通用
文件頁數(shù)： 1/2頁
文件大小： 26K
代理商： NTE2349
NTE2349 (NPN) & NTE2350 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
High DC Current Gain:
h
FE
= 1000 (Min) @ I
C
= 25A
h
FE
= 400 (Min) @ I
C
= 50A
Diode Protection to Rated I
C
Monolithic Construction
w
/Built–In Base–Emitter Shunt Resistor
Junction Temperature to +200
°
C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C @ T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec Max), T
L
120V
120V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50A
100A
2A
300W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.71W/
°
C
–55
°
to +200
°
C
–55
°
to +200
°
C
0.584
°
C
+275
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, I
B
= 0
I
CER
V
CE
= 120V, R
BE
= 1k
V
CE
= 120V, R
BE
= 1k
, T
C
= +150
°
C
I
CEO
V
CE
= 50V, I
B
= 0
I
EBO
V
BE
= 5V, I
C
= 0
120
–
–
V
Collector–Emitter Leakage Current
–
–
2
mA
–
–
10
mA
–
–
2
mA
Emitter Cutoff Current
–
–
2
mA
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