參數(shù)資料
型號： NTE2355
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors
中文描述： 硅晶體管互補數(shù)字瓦特/ 2內(nèi)置偏置電阻10,000
文件頁數(shù)： 1/2頁
文件大小： 24K
代理商： NTE2355
NTE2355 (NPN) & NTE2356 (PNP)
Silicon Complementary Transistors
Digital
w
/2 Built–In 10k
Bias Resistors
Features:
Built–In Bias Resistor (R
1
= 10k
, R
2
= 10k
)
Small–Sized Package (TO92 type)
Applications:
Switching Circuit
Inverter
Interface Circuit
Driver
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
50V
10V
100mA
200mA
300mW
+150
°
C
–55
°
to +160
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
CEO
I
EBO
h
FE
f
T
V
CB
= 40V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 5mA
–
–
0.1
–
–
0.5
Emitter Cutoff Current
170
250
330
DC Current Gain
50
–
–
Gain Band–width Product
NTE2355
–
250
–
MHz
NTE2356
–
200
–
MHz
Output Capacitance
NTE2355
C
ob
V
CB
= 10V, f = 1MHz
–
3.7
–
pF
NTE2356
–
5.5
–
pF
相關(guān)PDF資料
PDF描述
NTE2357 Silicon Complementary Transistors Digital w/2 Built-In 22k Bias Resistors
NTE2359 Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE2356 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -50V TO-92 制造商:NTE Electronics 功能描述:T-PNP-SI W/ 10K RESISTOR 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -50V TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:50; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Digital BJT PNP 50V 200mA 3-Pin TO-92
NTE2357 制造商:NTE Electronics 功能描述:T-NPN-SI W/ 22K RESISTOR 制造商:NTE Electronics 功能描述:TO-92 NPN DIG TRANS 制造商:NTE Electronics 功能描述:Trans Digital BJT NPN 50V 200mA 3-Pin TO-92
NTE2358 制造商:NTE Electronics 功能描述:T-PNP-SI W/ 22K RESISTOR 制造商:NTE Electronics 功能描述:TO-92 PNP DIGITAL 制造商:NTE Electronics 功能描述:Trans Digital BJT PNP 50V 200mA 3-Pin TO-92
NTE2359 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 50V IC=0.1A TO-92 TYPE CASE W/2 BUILT-IN 47K BIAS RESISTO 制造商:NTE Electronics 功能描述:T-NPN-SI W/ 47K RESISTOR 制造商:NTE Electronics 功能描述:TO-92 NPN DIGITAL 制造商:NTE Electronics 功能描述:PRE-BIASED DIG TRANS, NPN 50V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:50; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Digital BJT NPN 50V 200mA 3-Pin TO-92
NTE2359-LF 制造商:NTE Electronics 功能描述:T-NPN-SI W/ 47K RESISTOR
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