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參數(shù)資料
| 型號(hào)： | NTE234 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-SOIC -25 to 85 |
| 中文描述： | 硅PNP晶體管低噪聲，高增益放大器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | NTE234 |
NTE234
Silicon PNP Transistor
Low Noise, High Gain Amplifier
Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Features:
Low Noise
High DC Current Gain
High Breakdown Voltage
Low Pulse Noise
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady State Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V
120V
5V
100mA
100mA
300mW
–55
°
to +125
°
C
–55
°
to +125
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
V
CB
= 120V, I
E
= 0
V
EB
= 5V, I
C
= 0
–
–
100
nA
Emitter Cutoff Current
–
–
100
nA
Breakdown Voltage
Collector–to–Emitter
V
(BR)CEO
I
C
= 1mA, I
B
= 0
120
–
–
V
DC Current Gain
h
FE
V
CE
= 6V, I
C
= 2mA
350
–
700
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