參數(shù)資料
型號： NTE2347
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor General Purpose, Medium Power
中文描述： 硅NPN晶體管通用，中功率
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE2347
NTE2347
Silicon NPN Transistor
General Purpose, Medium Power
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
Collector–Base Voltage (I
E
= 0), V
CBO
Collector–Emitter Voltage (I
B
= 0), V
CEO
Emitter–Base Voltage (I
C
= 0), V
EBO
Collector Current, I
C
Total Power Dissipation, P
tot
T
A
≤
+25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
≤
+25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
≤
+100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
150V
80V
6V
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W
7W
4W
+200
°
C
–65
°
to +200
°
C
25
°
C/W
175
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CE
= 150V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
CE
= 100V, V
BE
= 0, T
C
= +150
°
C
V
EB
= 6V, I
C
= 0
V
CEO(sus)
I
C
= 50mA, I
B
= 0, Note 1
V
CE(sat)
I
C
= 5A, I
B
= 500mA, Note 1
V
BE(sat)
I
C
= 5A, I
B
= 500mA, Note 1
h
FE
I
C
= 2A, V
CE
= 2V, Note 1
I
C
= 2A, V
CE
= 2V, T
C
= –55
°
C, Note 1
f
T
I
C
= 500mA, V
CE
= 5V
C
CBO
V
CB
= 10V, I
E
= 0, f = 1MHz
t
on
V
CC
= 20V, I
C
= 500mA, I
B1
= 500mA
t
s
V
CC
= 20V, I
C
= 5A, I
B1
= –I
B2
= 500mA
t
f
–
–
1
mA
μ
A
μ
A
mA
–
–
1
–
–
100
Emitter Cutoff Current
I
EBO
–
–
1
Collector–Emitter Sustaining Voltage
80
–
–
V
Collector–Emitter Saturation Voltage
–
–
1
V
Base–Emitter Saturation Voltage
–
–
1.6
V
DC Current Gain
40
–
120
15
–
–
Transition Frequency
50
–
–
MHz
Collector–Base Capacitance
–
–
80
pF
μ
s
μ
s
μ
s
Turn–On Time
–
–
0.35
Storage Time
–
–
0.35
Fall Time
–
–
0.3
Note 1. Pulse Test: Pulse Duration = 300
μ
s, Duty Cycle = 1.5%.
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