參數(shù)資料
型號(hào)： NTE2348
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor High Voltage, High Speed Switch
中文描述： 硅NPN晶體管高壓，高速開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 22K
代理商： NTE2348
NTE2348
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
High Breakdown Voltage, High Reliability
Fast Switching Speed
Wide Safe Operating Area
Absolute Maximum ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
≤
300
μ
s, Duty Cycle
≤
10%.
1100V
800V
7V
12A
30A
6A
150W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE (1)
h
FE (2)
f
T
C
ob
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 800mA
V
CE
= 5V, I
C
= 4A
V
CE
= 10V, I
C
800mA
V
CB
= 10V, f = 1MHz
I
C
= 6A, I
B
= 1.2mA
I
C
= 6A, I
B
= 1.2mA
Min
–
–
10
8
–
–
–
–
Typ
–
–
–
–
15
215
–
–
Max
10
10
–
–
–
–
2.0
1.5
Unit
μ
A
μ
A
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
MHz
pF
V
V
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