參數(shù)資料
型號(hào)： NTE2301
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor High Voltage Horizontal Output
中文描述： 硅NPN晶體管輸出高電壓水平
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 22K
代理商： NTE2301
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
(Note 1)
Collector
–
Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 50mA, I
B
= 0
I
CES
V
CE
= 1500V, V
BE
= 0
I
EBO
V
BE
= 5V, I
C
= 0
750
–
–
V
Collector Cutoff Current
–
–
1
mA
Emitter Cutoff Current
–
–
1
mA
ON Characteristics
(Note 1)
Collector
–
Emitter Saturation Voltage
V
CE(sat)
I
C
= 4.5A, I
B
= 1.8A
I
C
= 3.5A, I
B
= 1.5A
I
C
= 4.5A, I
B
= 1.8A
I
C
= 3.5A, I
B
= 1.5A
–
–
5
V
–
–
5
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
–
–
1.5
V
–
–
1.5
V
Dynamic Characteristics
Current Gain
–
Bandwidth Product
f
T
I
C
= 100mA, V
CE
= 5V, f
test
= 1MHz
V
CB
= 10V, I
E
= 0, f = 0.1MHz
–
4
–
MHz
Output Capacitance
C
ob
–
125
–
pF
Switching Characteristics
Fall Time
t
f
I
C
= 4.5A, I
B1
= 1.8A, L
B
= 8
μ
H
I
C
= 4.5A, I
B1
= 1.8A, L
B
= 8
μ
H,
T
C
= +100
°
C
–
0.4
1.0
μ
s
μ
s
–
0.6
–
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle = 2%.
NOTE:
Dotted line indicates that
case may have square corners
B
C
E
C
.156
(3.96)
Dia.
.600
(15.24)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.216 (5.45)
.055 (1.4)
.015 (0.39)
.173 (4.4)
.060 (1.52)
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