- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363686 > NTE2305 (NTE Electronics, Inc.) Silicon Complementary Transistors High Voltage Power Amplifier PDF資料下載
參數(shù)資料
| 型號： | NTE2305 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Voltage Power Amplifier |
| 中文描述： | 硅高壓晶體管互補(bǔ)功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 23K |
| 代理商： | NTE2305 |
NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regu-
lator circuits.
Features:
High Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 160V
High DC Current Gain: h
FE
= 35 Typ @ I
C
= 8A
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 8A
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak (Note 1)
Continuous Base Current, I
B
Power Dissipation (T
C
= +25
°
C), P
D
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Note 1. Pulse Test: Pulse Width
≤
5ms, Duty Cycle
≥
10%.
160V
160V
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16A
20A
5A
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
–65
°
to +150
°
C
1
°
C/W
Electrical Charactertistics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
CEX
I
C
= 200mA, I
B
= 0, Note 2
V
CE
= 160V, V
EB(off)
= 1.5V
V
CE
= 160V, V
EB9off)
= 1.5V, T
C
= +150
°
C
V
CE
= 80V, I
B
= 0
V
BE
= 7V, I
C
= 0
V
CB
= 160V, I
E
= 0
160
–
–
V
Collector–Emitter Cutoff Current
–
–
0.1
mA
–
–
5.0
mA
μ
A
mA
μ
A
I
CEO
I
EBO
I
CBO
–
–
750
Emitter–Base Cutoff Current
–
–
1.0
Collector–Base Cutoff Current
–
–
750
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≥
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE2307 | Silicon NPN Transistor High Gain Power Amp |
| NTE2308 | Silicon NPN Transistor High Voltage, High Current Switch |
| NTE230 | Silicon Controlled Rectifier (SCR) TV Deflection Circuit |
| NTE2310 | Silicon NPN Transistor High Voltage, High Speed Switch |
| NTE2311 | Silicon NPN Transistor High Voltage, High Speed Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2306 | 制造商:NTE Electronics 功能描述:TRANSISTORBJTPNP160V V(BR)C 制造商:NTE Electronics 功能描述:T-PNP-SI PWR AMP 制造商:NTE Electronics 功能描述:TO-218 PNP HI-V PWR 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 160V 16A 3-Pin(3+Tab) TO-218 |
| NTE2307 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor High Gain Power Amp |
| NTE2308 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 500V IC=12A TO-3P CASE TF=1.0US HIGH VOLTAGE HIGH CURRENT 制造商:NTE Electronics 功能描述:T-NPN-SI-HIGH VLTG SW 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 500V, 12A, TO-3P-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Transition Frequency Typ ft:20MHz; Power Dissipation Pd:2.5W; DC Collector Current:12A; DC Current Gain hFE:8 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 400V 12A 3-Pin 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-247 |
| NTE2309 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 900V IC=6A TO-3P CASE TF=0.7US HIGH VOLTAGE HIGH SPEED SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 800V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 800V 制造商:NTE Electronics 功能描述:T-NPN-SI-HIGH VOLTG SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 800V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency Typ ft:15MHz; Power Dissipation Pd:2.5W; DC Collector Current:12A; DC Current Gain hFE:10; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 800V 12A 3-Pin(3+Tab) TO-247 |
| NTE231 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon Controlled Rectifier (SCR) TV Deflection Circuit |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。