參數(shù)資料
型號： NTE2307
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor High Gain Power Amp
中文描述： 硅NPN晶體管高增益功率放大器
文件頁數(shù)： 1/2頁
文件大?。?/td> 20K
代理商： NTE2307
NTE2307
Silicon NPN Transistor
High Gain Power Amp
Features:
High Voltage
High DC Current Gain
High Collector Power Dissipation Capability
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200V
180V
5V
5A
2A
80W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CEO
I
EBO
V
(BR)CEO
I
C
= 50mA, I
B
= 0
h
FE
V
CB
= 5V, I
C
= 1A
V
CE(sat)
I
C
= 1A, I
B
= 20mA
V
BE
V
CE
= 5V, I
C
= 1A
Test Conditions
V
CB
= 200V, I
E
= 0
V
CE
= 180V, I
B
= 0
V
EB
= 5V, I
C
= 0
Min
–
–
–
180
500
–
0.6
Typ
–
–
–
–
–
–
0.7
Max
100
10
100
–
2000
1.0
0.8
Unit
μ
A
mA
μ
A
V
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
V
V
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