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參數(shù)資料
| 型號： | NTE2303 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Horizontal Deflection |
| 中文描述： | 硅NPN晶體管水平偏轉(zhuǎn) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE2303 |
NTE2303
Silicon NPN Transistor
Horizontal Deflection
Description:
The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen
black and white deflection circuits.
Features:
Collector–Emitter Voltage: V
CEX
= 1500V
Glassivated Base–Collector Junction
Switching Times with Inductive Loads: t
f
= 0.65
μ
s (Typ) @ I
C
= 2A
Maximum Ratings:
Collector–Emitter Voltage, V
CEO(sus)
Collector–Emitter Voltage, V
CEX
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Continuous Base Current, I
B
Continuous Emitter Current, I
E
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Maximum Thermal Resistance, Junction–to–Case, R
thJC
750V
1500V
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5V
2.5A
2.0A
4.5A
65W
0.65W/
°
C
–65
°
to +125
°
C
–65
°
to +125
°
C
1.54
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
(Note 1)
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 50mA, I
B
= 0
I
CES
V
CE
= 1500V, V
BE
= 0
I
EBO
V
EB
= 5V, I
C
= 0
750
–
–
V
Collector Cutoff Current
–
–
1.0
mA
Emitter Cutoff Current
–
–
0.1
mA
ON Characteristics
(Note 1)
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
I
C
= 2A, I
B
= 660mA
I
C
= 2A, I
B
= 660mA
–
–
5.0
V
Base–Emitter Saturation Voltage
–
–
1.5
V
Note 1 Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle = 2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2304 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 60V IC=15A TO-3P CASE TF=0.1US HIGH SPEED/CURRENT SWITCH 制造商:NTE Electronics 功能描述:T-NPN SI-HIGH CURRENT SW 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 50V 20A 3-Pin(3+Tab) TO-3P |
| NTE2305 | 制造商:NTE Electronics 功能描述:T-NPN-SI PWR AMP 制造商:NTE Electronics 功能描述:TO-218 NPN HI-V/PWR 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 160V 16A 3-Pin(3+Tab) TO-218 |
| NTE2306 | 制造商:NTE Electronics 功能描述:TRANSISTORBJTPNP160V V(BR)C 制造商:NTE Electronics 功能描述:T-PNP-SI PWR AMP 制造商:NTE Electronics 功能描述:TO-218 PNP HI-V PWR 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 160V 16A 3-Pin(3+Tab) TO-218 |
| NTE2307 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor High Gain Power Amp |
| NTE2308 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 500V IC=12A TO-3P CASE TF=1.0US HIGH VOLTAGE HIGH CURRENT 制造商:NTE Electronics 功能描述:T-NPN-SI-HIGH VLTG SW 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 500V, 12A, TO-3P-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Transition Frequency Typ ft:20MHz; Power Dissipation Pd:2.5W; DC Collector Current:12A; DC Current Gain hFE:8 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 400V 12A 3-Pin 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-247 |
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