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參數(shù)資料
| 型號： | NTE159 |
| 廠商： | NTE Electronics, Inc. |
| 元件分類： | 音頻放大器 |
| 英文描述： | Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) |
| 中文描述： | 硅PNP晶體管音頻放大器，開關(guān)（并發(fā)癥的NTE123AP） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE159 |
NTE159
Silicon PNP Transistor
Audio Amplifier, Switch
(Compl to NTE123AP)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= 25
°
C), P
D
Derate Above 25
°
C
Total Device Dissipation (T
C
= 25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction to Case, R
θ
JC
Thermal Resistance, Junction to Ambient, R
θ
JA
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com-
plementary pairs have their gain specification (h
FE
) matched to within 10% of each other.
80V
80V
5V
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
625mW
5mW/
°
C
1.5W
12mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
83.3
°
C/W
200
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
I
CBO
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= +75
°
C
I
EBO
80
–
–
V
Collector–Base Breakdown Voltage
80
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
Collector Cutoff Current
–
–
50
nA
μ
A
nA
–
–
5
Emitter Cutoff Current
–
–
100
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