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參數(shù)資料
| 型號： | NTE16006 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-SOIC 0 to 70 |
| 中文描述： | 硅NPN晶體管低頻輸出放大器瓦特/高電流增益 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE16006 |
NTE16006
Silicon NPN Transistor
Low Frequency Output Amp
w
/High Current Gain
Features:
High DC Current Gain
Low Collector–Emitter Saturation Voltage
An M type mold package that allows easy manual and automatic insertion. Can be firmly
mounted flush to PCB surface
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (Note 1), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V
20V
15V
700mA
1.5A
1W
+150
°
C
–55
°
to +150
°
C
Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm
2
in area.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
V
Collector Cutoff Current
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
V
CB
= 20V, I
E
= –20mA, f = 200MHz
V
CB
= 10 V, I
E
= 0, f = 1MHz
–
–
1
Emitter Cut–Off Current
–
–
10
Collector–Base Voltage
20
–
–
Collector–Emitter Voltage
20
–
–
V
Emitter–Base Voltage
15
–
–
V
DC Current Gain
1000
–
2500
–
Collector–Emitter Saturation Voltage
–
–
0.4
V
Transition Frequency
–
55
–
MHz
Collector Output Capacitance
–
11
15
pF
Note 2. Pulse Measurement
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