參數(shù)資料
型號: NTE16002
廠商: NTE Electronics, Inc.
英文描述: Quad Differential Comparator 14-SSOP 0 to 70
中文描述: 硅NPN晶體管射頻輸出功率,寶\u003d 13.5W,175MHz時
文件頁數(shù): 1/4頁
文件大?。?/td> 23K
代理商: NTE16002
NTE16002
Silicon NPN Transistor
RF Power Output, P
O
= 13.5W, 175MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
40V
65V
4V
3A
23W
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131mW/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
(BR)CEO(sus)
V
(BR)EBO
I
CEO
I
CEX
I
C
= 200mA, I
B
= 0, Note 1
I
E
= 0.25mA, I
C
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 30V, V
BE(off)
= 1.5V,
T
C
= +200
°
C
V
CE
= 65V, V
BE(off)
= 1.5V
V
CB
= 65V, I
E
= 0
V
BE
= 4V, I
C
= 0
40
V
Emitter–Base Breakdown Voltage
4
V
Collector Cutoff Current
0.25
mA
10
mA
5
mA
I
CBO
I
EBO
1
mA
Emitter Cutoff Current
0.25
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
I
C
= 500mA, I
B
= 100mA
I
C
= 1A, I
B
= 5A
5
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
1.0
V
Base–Emitter Saturation Voltage
1.5
V
Dynamic Characteristics
Current Gain–Bandwidth Product
f
T
V
CE
= 28V, I
C
= 150mA, f = 100MHz
V
CB
= 30V, I
E
= 0, f = 100kHz
400
MHz
Output Capacitance
C
ob
16
20
pF
Note 1. Pulsed through 25mH inductor.
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