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參數(shù)資料
| 型號(hào)： | NTE16001 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-SOIC 0 to 70 |
| 中文描述： | 硅NPN晶體管視頻中頻放大器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE16001 |
NTE16001
Silicon NPN Transistor
Video IF Amp
Features:
High Transistion Frequency
Good Linearity of DC Current Gain
An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly
Mounted Flush to PC Board Surface.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45V
35V
4V
50mA
600mW
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
V
Collector Cutoff Current
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= –10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f =
100MHz
–
–
10
Collector–Base Voltage
45
–
–
Collector–Emitter Voltage
35
–
–
V
Emitter–Base Voltage
4
–
–
V
DC Current Gain
20
50
100
Collector–Emitter Saturation Volatge
–
–
0.5
V
Transistion Frequency
300
500
–
MHz
Small–Signal Reverse Transfer Capaci-
tance
C
re
V
CE
= 10V, I
C
= 1mA
–
–
1.5
pF
Power Gain
PG
V
CB
= 10V, I
E
= –10mA, f = 58MHz
–
18
–
dB
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