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參數(shù)資料
| 型號： | NTB85N03T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 85 Amps, 28 Volts |
| 中文描述： | 15 A, 60 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 80K |
| 代理商： | NTB85N03T4 |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 1
1
Publication Order Number:
NTP85N03/D
NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
NChannel TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous
Drain Current
Continuous @ T
C
= 25
°
C
Single Pulse (t
p
= 10 s)
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Temperature Range
V
DSS
28
Vdc
Vdc
V
GS
20
I
D
I
DM
P
D
85*
190
80
0.66
55
to
+150
733
Adc
Apk
W
W/
°
C
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 28 Vdc, V
GS
= 10 Vdc, L = 5.0 mH,
I
L(pk)
= 17 A, RG = 25 )
E
AS
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
R
JC
R
JA
1.55
70
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
*Chip current capability limited by package.
T
L
260
°
C
NTx85N03
LLYWW
NTx85N03
LLYWW
85 AMPERES
28 VOLTS
R
DS(on)
= 6.1 m (Typ.)
Device
Package
Shipping
ORDERING INFORMATION
NTP85N03
TO220AB
50 Units/Rail
TO220AB
CASE 221A
Style 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx85N03
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418AA
Style 2
4
NTB85N03
D
2
PAK
50 Units/Rail
NTB85N03T4
D
2
PAK
800/Tape & Reel
http://onsemi.com
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相關代理商/技術參數(shù) |
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|---|---|
| NTB85N03T4G | 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB8N50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB90N02 | 功能描述:MOSFET 28V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB90N02_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 90 Amps, 24 Volts |
| NTB90N02G | 功能描述:MOSFET 28V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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