
NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
REV 1.0
May, 2001
34
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
DD
Power Supply Voltage
-0.3 to +4.6
V
1
V
DDQ
Power Supply Voltage for Output
-0.3 to +4.6
V
1
V
IN
Input Voltage
-0.3 to V
DD
+0.3
V
1
V
OUT
Output Voltage
-0.3 to V
DD
+0.3
V
1
T
A
Operating Temperature (ambient)
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +125
°
C
1
P
D
Power Dissipation
1.0
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
(T
A
=
0
°
C to 70
°
C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
DD
Supply Voltage
3.0
3.3
3.6
V
1
V
DDQ
Supply Voltage for Output
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
DD
+ 0.3
V
1, 2
V
IL
Input Low Voltage
-0.3
—
0.8
V
1, 3
1. All voltages referenced to V
SS
and V
SSQ
.
2. V
IH
(max) = V
DD
+ 1.2V for pulse width
≤
5ns.
3. V
IL
(min) = V
SS
- 1.2V for pulse width
≤
5ns.
Capacitance
(T
A
= 25
°
C, f = 1MHz, V
DD
= 3.3V
±
0.3V)
Symbol
Parameter
Min.
Typ
Max.
Units
Notes
C
I
Input Capacitance (A0-A12, BA0, BA1, CS, RAS, CAS, WE, CKE, DQM)
2.5
3.0
3.8
pF
Input Capacitance (CK)
2.5
2.8
3.5
pF
C
O
Output Capacitance (DQ0 - DQ15)
4.0
4.5
6.5
pF