參數(shù)資料
型號(hào)： NT5SV16M16AT-75B
廠商： Electronic Theatre Controls, Inc.
英文描述： 256Mb Synchronous DRAM
中文描述： 256Mb的同步DRAM
文件頁(yè)數(shù)： 31/65頁(yè)
文件大?。?/td> 814K
代理商： NT5SV16M16AT-75B
NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
REV 1.0
May, 2001
31
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Current State Truth Table
(Part 1 of 3)(See note 1)
Current State
Command
Action
Notes
CS
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
RAS CAS
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
WE
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
BA0,BA1
A12 - A0
Description
Mode Register Set
Auto or Self Refresh
Precharge
Idle
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
OP Code
Set the Mode Register
Start Auto or Self Refresh
No Operation
Activate the specified bank and row
ILLEGAL
ILLEGAL
No Operation
No Operation or Power Down
ILLEGAL
ILLEGAL
Precharge
ILLEGAL
Start Write; Determine if Auto Precharge
Start Read; Determine if Auto Precharge
No Operation
No Operation
ILLEGAL
ILLEGAL
Terminate Burst; Start the Precharge
ILLEGAL
Terminate Burst; Start the Write cycle
Terminate Burst; Start a new Read cycle
Continue the Burst
Continue the Burst
ILLEGAL
ILLEGAL
Terminate Burst; Start the Precharge
ILLEGAL
Terminate Burst; Start a new Write cycle
Terminate Burst; Start the Read cycle
Continue the Burst
Continue the Burst
2
X
BS
BS
BS
BS
X
X
X
X
2, 3
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
Write w/o Precharge
Read w/o Precharge
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
4
4
5
Row Active
X
BS
BS
BS
BS
X
X
6
4
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
7, 8
7, 8
Read
X
BS
BS
BS
BS
X
X
4
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
8, 9
8, 9
Write
X
BS
BS
BS
BS
X
X
4
Write
Read
No Operation
Device Deselect
8, 9
8, 9
1. CKE is assumed to be active (high) in the previous cycle for all entries. The Current State is the state of the bank that the Command is
being applied to.
2. All Banks must be idle; otherwise, it is an illegal action.
3. If CKE is active (high) the SDRAM will start the Auto (CBR) Refresh operation, if CKE is inactive (low) than the Self Refresh mode is
entered.
4. The Current State refers to only one of the banks. If BS selects this bank then the action is illegal. If BS selects the bank not being refer-
enced by the Current State then the action may be legal depending on the state of that bank.
5. If CKE is inactive (low) then the Power Down mode is entered; otherwise there is a No Operation.
6. The minimum and maximum Active time (t
RAS
) must be satisfied.
7. The RAS to CAS Delay (t
RCD
) must occur before the command is given.
8. Column address A10 is used to determine if the Auto Precharge function is activated.
9. The command must satisfy any bus contention, bus turn around, and/or write recovery requirements.
10. The command is illegal if the minimum bank to bank delay time (t
RRD
) is not satisfied.
相關(guān)PDF資料
PDF描述
NT5SV16M16AT-75BL 256Mb Synchronous DRAM
NT5SV16M16AT-7K 256Mb Synchronous DRAM
NT5SV16M16AT-7KL 256Mb Synchronous DRAM
NT5SV16M16AT-8B 256Mb Synchronous DRAM
NT5SV16M16AT-8BL 256Mb Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NT5SV16M16AT-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Synchronous DRAM
NT5SV16M16AT-7K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Synchronous DRAM
NT5SV16M16AT-7KL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Synchronous DRAM
NT5SV16M16AT-8B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Synchronous DRAM
NT5SV16M16AT-8BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Synchronous DRAM
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