- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363667 > NSS12200L (ON SEMICONDUCTOR) 12V, 4.0A, Low VCE(sat) PNP Transistor(12V, 4.0A, 低VCE(sat) PNP晶體管) PDF資料下載
參數(shù)資料
| 型號： | NSS12200L |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 12V, 4.0A, Low VCE(sat) PNP Transistor(12V, 4.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 12V的，4.0a上，低Vce（sat）PNP晶體管（12V的，4.0a上，低的Vce（星期六）進(jìn)步黨晶體管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | NSS12200L |
Semiconductor Components Industries, LLC, 2006
September, 2006
Rev. 0
1
Publication Order Number:
NSS12200L/D
NSS12200LT1G
12 V, 4.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb
Free Device
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
12
Vdc
Collector-Base Voltage
V
CBO
12
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Collector Current
Continuous
I
C
2.0
A
Collector Current
Peak
I
CM
4.0
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
460
3.7
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 1)
270
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
540
4.3
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 2)
230
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
4 @ 100 mm
2
, 1 oz. copper traces.
2. FR
4 @ 500 mm
2
, 1 oz. copper traces.
3. Thermal response.
Device
Package
Shipping
ORDERING INFORMATION
NSS12200LT1G
SOT
23
(Pb
Free)
3000/Tape & Reel
DEVICE MARKING
COLLECTOR
3
1
BASE
2
EMITTER
SOT
23 (TO
236)
CASE 318
STYLE 6
3
2
1
http://onsemi.com
12 VOLTS
4.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
65 m
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VE M
VE
M
= Specific Device Code
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSS12200WT1G | 12V, 3A, Low VCE(sat) PNP Transistor(12V, 3A, 低VCE(sat) PNP晶體管) |
| NSS12500UW3T2G | 12 V, 8.0 A, Low VCE(sat) PNP Transistor(12V, 8.0A, 低VCE(sat) PNP晶體管) |
| NSS20200LT1G | 20 V, 4.0 A, Low VCE(sat) PNP Transistor(20V, 4.0A, 低VCE(sat) PNP晶體管) |
| NSS20300MR6T1G | 20V, 5A, Low VCE(sat) PNP Transistor(20V,5A,低VCE(sat)，PNP型晶體管) |
| NSS20500UW3T2G | 20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS12200LT1G | 功能描述:兩極晶體管 - BJT 12V PNP LOW VCE(SAT) XTR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS12200LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 V, 4.0 A, Low VCE(sat) PNP Transistor |
| NSS12200WT1G | 功能描述:兩極晶體管 - BJT 2A 12V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS12200WT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 V, 3 A, Low VCE(sat) PNP Transistor |
| NSS12201LT1G | 功能描述:兩極晶體管 - BJT LO V NPN TRANSISTOR 12V 4.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。